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Modelling and Evalaution of the Bidirectional Surge Current Robustness of Si(-IGBT and -Diode), SiC(-MOSFETs and -JFET) and GaN(-HEMTs) Devices

DOI zum Zitieren der Version auf EPub Bayreuth: https://doi.org/10.15495/EPub_UBT_00008396
URN zum Zitieren der Version auf EPub Bayreuth: urn:nbn:de:bvb:703-epub-8396-6

Titelangaben

Nehmer, Dominik ; Ringelmann, Tim ; Bakran, Mark-M.:
Modelling and Evalaution of the Bidirectional Surge Current Robustness of Si(-IGBT and -Diode), SiC(-MOSFETs and -JFET) and GaN(-HEMTs) Devices.
In: Energies. Bd. 17 (2024) Heft 17 . - 4362.
ISSN 1996-1073
DOI der Verlagsversion: https://doi.org/10.3390/en17174362

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Abstract

This paper will evaluate the surge current robustness of different devices in relation to the active short circuit (ASC). For the purposes of this study, a Si IGBT and its diode, two SiC MOSFETs with different voltage ratings, a SiC JFET, and three GaN HEMTs will be compared. For the GaN devices, a eMode, a dMode, and a cascode device are employed. With the exception of the Si diode, all devices exhibited a current saturation effect. This saturation will result in significant losses and, ultimately, a thermal defect. For all devices, a safe operating area (SOA) criterion is established. For the SiC and GaN devices, the saturation voltage can be employed to define the safe operating area (SOA) criterion. In this context, two on-state resistance models will be defined for these devices. One is solely temperature-dependent, while the other also considers current saturation. Consequently, the saturation voltage and the on-resistance model represent a straightforward methodology for evaluating the ASC robustness of the devices. For all devices, a recommendation for a loss model and SOA criterion will be provided. Finally, the surge current robustness of all devices is compared. The Si, SiC and GaN devices exhibit comparable high surge current robustness in the application, with the exception of the GaN eMode, which is susceptible to strong current saturation.

Weitere Angaben

Publikationsform: Artikel in einer Zeitschrift
Keywords: surge current; active short circuit; wide-band gap; electrical vehicle; drive inverter; GaN HEMT; SiC MOSFET; SiC JFET; Si IGBT; Si diode
Themengebiete aus DDC: 600 Technik, Medizin, angewandte Wissenschaften > 620 Ingenieurwissenschaften
Institutionen der Universität: Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Mechatronik > Lehrstuhl Mechatronik - Univ.-Prof. Dr.-Ing. Mark-M. Bakran
Profilfelder > Advanced Fields > Neue Materialien
Profilfelder > Emerging Fields > Energieforschung und Energietechnologie
Forschungseinrichtungen > Forschungsstellen > Zentrum für Energietechnik - ZET
Fakultäten
Fakultäten > Fakultät für Ingenieurwissenschaften
Fakultäten > Fakultät für Ingenieurwissenschaften > Lehrstuhl Mechatronik
Profilfelder
Profilfelder > Advanced Fields
Profilfelder > Emerging Fields
Forschungseinrichtungen
Forschungseinrichtungen > Forschungsstellen
Sprache: Englisch
Titel an der UBT entstanden: Ja
URN: urn:nbn:de:bvb:703-epub-8396-6
Eingestellt am: 02 Apr 2025 08:40
Letzte Änderung: 02 Apr 2025 08:41
URI: https://epub.uni-bayreuth.de/id/eprint/8396

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