Veröffentlichungen "Bakran, Mark-M."

Nehmer, Dominik ; Ringelmann, Tim ; Bakran, Mark-M.:
Modelling and Evalaution of the Bidirectional Surge Current Robustness of Si(-IGBT and -Diode), SiC(-MOSFETs and -JFET) and GaN(-HEMTs) Devices.
In: Energies. Bd. 17 (2024) Heft 17 . - 4362.
ISSN 1996-1073
DOI der Verlagsversion: https://doi.org/10.3390/en17174362

Häring, Johannes ; Hepp, Maximilian ; Wondrak, Wolfgang ; Bakran, Mark-M.:
A Neutral Point Balancing and Voltage Error Compensation Approach for Fault-Tolerant 3-Level Inverters.
In: IEEE Open Journal of Power Electronics. Bd. 5 (2024) . - S. 106-122.
ISSN 2644-1314
DOI der Verlagsversion: https://doi.org/10.1109/OJPEL.2023.3347036

Bergmann, Lukas ; Bakran, Mark-M.:
Design and validation of a novel semiconductor area optimised 3300 V SiC half bridge for MMC.
In: IET Power Electronics. Bd. 17 (2024) Heft 7 . - S. 789-801.
ISSN 1755-4543
DOI der Verlagsversion: doi:/10.1049/pel2.12693

Gleißner, Michael ; Nehmer, Dominik ; Bakran, Mark-M.:
Junction Temperature Measurement Based on the Internal Gate Resistance for a Wide Range of Power Semiconductors.
In: IEEE Open Journal of Power Electronics. Bd. 4 (2023) . - S. 293-305.
ISSN 2644-1314
DOI der Verlagsversion: https://doi.org/10.1109/OJPEL.2023.3265850

Maier, Robert ; Bakran, Mark-M.:
SiC MOSFET switching – Lower losses without increased EMI : A technique to evaluate and achieve this goal.
In: The Journal of Engineering. (2022) Heft 1 . - S. 76-85.
ISSN 2051-3305
DOI der Verlagsversion: https://doi.org/10.1049/tje2.12099