Design and validation of a novel semiconductor area optimised 3300 V SiC half bridge for MMC

DOI zum Zitieren der Version auf EPub Bayreuth: https://doi.org/10.15495/EPub_UBT_00008354
URN to cite this document: urn:nbn:de:bvb:703-epub-8354-8

Title data

Bergmann, Lukas ; Bakran, Mark-M.:
Design and validation of a novel semiconductor area optimised 3300 V SiC half bridge for MMC.
In: IET Power Electronics. Vol. 17 (2024) Issue 7 . - pp. 789-801.
ISSN 1755-4543
DOI der Verlagsversion: doi:/10.1049/pel2.12693

	Format: PDF Name: IET Power Electronics - 2024 - Bergmann - Design and validation of a novel semiconductor area optimised 3300 V SiC half.pdf Version: Published Version Available under License Creative Commons BY-ND 4.0: Attribution, No Derivative Works
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Project information

Project title:	Project's official title Project's id Open Access Publizieren No information
Project financing:	Deutsche Forschungsgemeinschaft

Abstract

This article presents the design and experimental validation of a novel semiconductor area optimised 3300 V half bridge with Silicon Carbide (SiC) MOSFETs for HVDC converters. Based on a loss simulation, the problem statement is provided. On this results, a mathematical derivation for the optimised semiconductor area design is executed. After this step, a system loss simulation shows the performance in efficiency and specific output power. Finally, a proof of concept was provided by a scaled hardware test setup to characterise the dynamic behaviour of the novel SiC half bridge design compared to the conventional SiC half bridge.

Further data

Item Type:	Article in a journal
Keywords:	HVDC power convertors; MOSFET; wide band gap semiconductors
DDC Subjects:	600 Technology, medicine, applied sciences > 620 Engineering
Institutions of the University:	Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics
Language:	English
Originates at UBT:	Yes
URN:	urn:nbn:de:bvb:703-epub-8354-8
Date Deposited:	25 Mar 2025 11:04
Last Modified:	25 Mar 2025 11:05
URI:	https://epub.uni-bayreuth.de/id/eprint/8354

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