SiC MOSFET switching – Lower losses without increased EMI : A technique to evaluate and achieve this goal

DOI zum Zitieren der Version auf EPub Bayreuth: https://doi.org/10.15495/EPub_UBT_00006584
URN to cite this document: urn:nbn:de:bvb:703-epub-6584-4

Title data

Maier, Robert ; Bakran, Mark-M.:
SiC MOSFET switching – Lower losses without increased EMI : A technique to evaluate and achieve this goal.
In: The Journal of Engineering. (2022) Issue 1 . - pp. 76-85.
ISSN 2051-3305
DOI der Verlagsversion: https://doi.org/10.1049/tje2.12099

	Format: PDF Name: The Journal of Engineering - 2021 - Maier - SiC MOSFET switching Lower losses without increased EMI A technique to.pdf Version: Published Version Available under License Creative Commons BY-NC 4.0: Attribution, Noncommercial
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Abstract

With increasing switching speed of new power semiconductors like the SiC MOSFET, special attention has to be paid on the electromagnetic interference and its limitations. In this work, an evaluation criterion is developed as an optimisation tool for maximum exploitation of conducted electromagnetic interference limit by optimizing the switching process of a SiC MOSFET. The switching losses of power semiconductors can be reduced by increasing their switching speed. Unfortunately, at the same time, the electromagnetic interference will increase due to higher voltage and current slopes and higher switching oscillations. The electromagnetic interference caused by the switching process can be reduced by decreasing the switching speed. This also reduces the switching oscillation but inevitably increases the switching losses. The electromagnetic interference criterion developed in this paper will help to identify the proper switching speed for minimum losses under compliance with switching process related electromagnetic interference. It can be used to evaluate the benefit of more advanced gate control methods that allow increasing the switching speed without increasing the switching oscillation amplitude. The proposed method will not replace the final electromagnetic interference testing, but it will help determine the proper gate control method for lowest possible switching losses without violating the electromagnetic interference restrictions in an early development state. Measurements show that the switching losses can be reduced by 75% with a proper gate control method, where the proposed method assures the compliance with the electromagnetic interference limit.

Further data

Item Type:	Article in a journal
DDC Subjects:	600 Technology, medicine, applied sciences > 620 Engineering
Institutions of the University:	Faculties > Faculty of Engineering Science > Chair Mechatronics > Chair Mechatronics - Univ.-Prof. Dr.-Ing. Mark-M. Bakran Profile Fields > Advanced Fields > Advanced Materials Profile Fields > Emerging Fields > Energy Research and Energy Technology Research Institutions > Research Units > Zentrum für Energietechnik - ZET Faculties Faculties > Faculty of Engineering Science Faculties > Faculty of Engineering Science > Chair Mechatronics Profile Fields Profile Fields > Advanced Fields Profile Fields > Emerging Fields Research Institutions Research Institutions > Research Units
Language:	English
Originates at UBT:	Yes
URN:	urn:nbn:de:bvb:703-epub-6584-4
Date Deposited:	03 Aug 2022 09:47
Last Modified:	03 Aug 2022 09:47
URI:	https://epub.uni-bayreuth.de/id/eprint/6584

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