Veröffentlichungen "Ringelmann, Tim"

Nehmer, Dominik ; Ringelmann, Tim ; Bakran, Mark-M.:
Modelling and Evalaution of the Bidirectional Surge Current Robustness of Si(-IGBT and -Diode), SiC(-MOSFETs and -JFET) and GaN(-HEMTs) Devices.
In: Energies. Bd. 17 (2024) Heft 17 . - 4362.
ISSN 1996-1073
DOI der Verlagsversion: https://doi.org/10.3390/en17174362