Mapping the Density of States Distribution of Organic Semiconductors by Employing Energy Resolved–Electrochemical Impedance Spectroscopy

Titelangaben

Bässler, Heinz ; Kroh, Daniel ; Schauer, Franz ; Nádaždy, Vojtech ; Köhler, Anna:
Mapping the Density of States Distribution of Organic Semiconductors by Employing Energy Resolved–Electrochemical Impedance Spectroscopy.
In: Advanced Functional Materials. Bd. 31 (2021) Heft 9 . - No. 2007738.
ISSN 1616-3028
DOI der Verlagsversion: https://doi.org/10.1002/adfm.202007738

Volltext

	Format: PDF Name: adfm.202007738.pdf Version: Veröffentlichte Version Verfügbar mit der Lizenz Creative Commons BY 4.0: Namensnennung
	Download (1MB)

Abstract

Abstract Although the density of states (DOS) distribution of charge transporting states in an organic semiconductor is vital for device operation, its experimental assessment is not at all straightforward. In this work, the technique of energy resolved–electrochemical impedance spectroscopy (ER-EIS) is employed to determine the DOS distributions of valence (highest occupied molecular orbital (HOMO)) as well as electron (lowest unoccupied molecular orbital (LUMO)) states in several organic semiconductors in the form of neat and blended films. In all cases, the core of the inferred DOS distributions are Gaussians that sometimes carry low energy tails. A comparison of the HOMO and LUMO DOS of P3HT inferred from ER-EIS and photoemission (PE) or inverse PE (IPE) spectroscopy indicates that the PE/IPE spectra are by a factor of 2–3 broader than the ER-EIS spectra, implying that they overestimate the width of the distributions. A comparison of neat films of MeLPPP and SF-PDI2 or PC(61)BM with corresponding blends reveals an increased width of the DOS in the blends. The results demonstrate that this technique does not only allow mapping the DOS distributions over five orders of magnitude and over a wide energy window of 7 eV, but can also delineate changes that occur upon blending.